Critical
发表于 2025-3-23 13:41:11
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可商量
发表于 2025-3-23 15:02:16
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Truculent
发表于 2025-3-23 19:05:51
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禁止,切断
发表于 2025-3-24 00:30:39
GaN-Based Laser Diodes978-3-642-24538-1Series ISSN 2190-5053 Series E-ISSN 2190-5061
ANTIC
发表于 2025-3-24 06:25:14
https://doi.org/10.1007/b106969er communications and data storage on CDs and DVDs. The red and infrared laser diodes for these applications are based on the III-IV semiconductor systems AlGaInP and InGaAsP and they are commercially available for a broad spectrum of emission wavelengths.
LITHE
发表于 2025-3-24 10:00:53
P. W. Brennecke,E. W. Justi,J. Kleinwächter devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser d
GRATE
发表于 2025-3-24 11:51:37
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strdulate
发表于 2025-3-24 18:28:18
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可以任性
发表于 2025-3-24 22:58:45
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disrupt
发表于 2025-3-25 00:30:51
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