一个希拉里 发表于 2025-3-21 18:19:44
书目名称Extraction of Semiconductor Diode Parameters影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0319966<br><br> <br><br>书目名称Extraction of Semiconductor Diode Parameters读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0319966<br><br> <br><br>ANTIC 发表于 2025-3-21 20:52:06
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Contemporary Parameter Extraction Methods,n suggested, with varying complexity and utility. Here, we present a cross-section of the most recent electrical methods devised over the last decade. The methods are divided into three broad categories. These are current-voltage methods, capacitance-voltage (impedance) methods, and transport methoddominant 发表于 2025-3-22 06:14:23
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A Novel Approach Based on Symmetry,barrier height, and built-in potential. It achieves this by reformulating the TE equation into an ordinary differential equation, revealing an unexpected symmetry that eliminates the series resistance term. Although the method’s derivation may appear complex, its practical application is straightfor高调 发表于 2025-3-23 00:10:50
Artifical Intelligence Parameter Extraction Methods,egression (LR), and Decision Tree (DT). These models are employed for the comprehensive analysis and extraction of internal parameters of Schottky photodiodes (SPDs), all while operating in the absence of any prior knowledge of the intricate and nonlinear thermionic emission (TE) expression governinsinoatrial-node 发表于 2025-3-23 05:16:47
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https://doi.org/10.1007/978-3-031-48847-4Schottky Junctions; Semiconductor Diode Parameters; Metal-Semiconductor Diodes; Metal-Insulator Diodes;