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我不死扛 发表于 2025-3-23 16:01:22

https://doi.org/10.1007/978-3-322-88134-2llowing chapters. The focus is primarily on MSJ diodes since all solid-state devices involve such junctions. In the interest of presenting a more consistent discussion, the scope is focused on devices constructed on p-type silicon.

invert 发表于 2025-3-23 19:11:05

Mathias Gutmann,Benjamin Rathgebern suggested, with varying complexity and utility. Here, we present a cross-section of the most recent electrical methods devised over the last decade. The methods are divided into three broad categories. These are current-voltage methods, capacitance-voltage (impedance) methods, and transport method

Nefarious 发表于 2025-3-23 22:31:08

Der Verlauf von Informationswertfunktionen Understanding semiconductor traps is essential for optimizing device performance, enhancing device reliability, and improving the efficiency and functionality of new materials, particularly in optoelectronic devices. This chapter explores the significance of characterizing these traps, which are in

拥护者 发表于 2025-3-24 04:38:44

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尾巴 发表于 2025-3-24 08:08:21

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常到 发表于 2025-3-24 21:01:02

Richard OcayaCompares different parameter extraction methods to show strengths and weaknesses of each approach.Features a comprehensive and up-to-date review of the field for researchers and engineers.Provides com

咯咯笑 发表于 2025-3-25 01:53:38

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查看完整版本: Titlebook: Extraction of Semiconductor Diode Parameters; A Comparative Review Richard Ocaya Book 2024 The Editor(s) (if applicable) and The Author(s),