悬挂
发表于 2025-3-25 05:33:15
Atomic Arrangement and In Composition in InGaN Quantum WellsIn this section, atomic arrangement and indium incorporation in InGaN epitaxial layers are discussed. Chichibu et al. have studied why In-containing (Al, In, Ga)N films exhibit a defect-insensitive emission probability.
同步信息
发表于 2025-3-25 08:58:30
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弄皱
发表于 2025-3-25 12:59:51
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Indelible
发表于 2025-3-25 17:54:45
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我不重要
发表于 2025-3-25 20:48:23
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被告
发表于 2025-3-26 00:59:19
Epitaxial Growth of III-Nitride Compounds978-3-319-76641-6Series ISSN 0933-033X Series E-ISSN 2196-2812
Glycogen
发表于 2025-3-26 06:15:51
https://doi.org/10.1007/978-3-319-76641-6Fundamental Growth Processes; III-Nitride Semiconductors; Dislocation Core Structure; Adsorption-Desorp
座右铭
发表于 2025-3-26 08:27:24
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执
发表于 2025-3-26 16:10:09
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airborne
发表于 2025-3-26 18:12:48
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