FUME
发表于 2025-3-23 10:07:29
https://doi.org/10.1007/978-3-031-24396-7The reliability of calculated results using computational approach is crucial for discussing various aspects of growth related phenomena in III-nitride compounds.
大火
发表于 2025-3-23 15:21:24
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奖牌
发表于 2025-3-23 20:06:12
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藕床生厌倦
发表于 2025-3-24 01:58:53
Preparing the Patient With COPD for Surgery,The epitaxial growth of thin films is controlled by various growth processes that involve adsorption of atoms and molecules onto a reconstructed surface, their subsequent diffusion across the surface, dissociation of molecules, and desorption from the surface.
apiary
发表于 2025-3-24 05:03:08
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ODIUM
发表于 2025-3-24 07:02:38
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FID
发表于 2025-3-24 14:34:36
Introduction,Since the successful fabrication of high-quality epitaxial GaN in 1990s, which leads to the development of blue light-emitting diodes and laser diodes, a new frontier in optoelectronics have been opened up.
dura-mater
发表于 2025-3-24 17:57:18
Computational MethodsComputational approach to investigate epitaxial growth of III-nitride compounds is primarily concerned with the numerical computation of electronic structures by ab initio calculations and semi-empirical atomistic techniques.
Lumbar-Spine
发表于 2025-3-24 22:51:19
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屈尊
发表于 2025-3-25 01:55:25
Thermodynamic Approach to InN EpitaxyIn this chapter, influences of N/III ratio, growth orientation and total pressure on epitaxial growth processes of In(Ga)N are discussed. It is known that N/III ratio is essential parameter to grow In(Ga)N thin films.