Abridge
发表于 2025-3-21 18:13:27
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防水
发表于 2025-3-21 23:27:27
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类似思想
发表于 2025-3-22 03:23:39
Book 2018ced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds..
一大群
发表于 2025-3-22 04:34:08
Fundamental Properties of III-Nitride Surfaces of surface reconstructions. It is well known that reconstructed structures appear on the growth front (surfaces) of semiconductor materials, so that investigations for the reconstructions on III-nitride surfaces are necessary from theoretical viewpoints taking growth conditions into account.
homocysteine
发表于 2025-3-22 10:28:08
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finite
发表于 2025-3-22 13:44:45
0933-033X th processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds..978-3-030-09542-0978-3-319-76641-6Series ISSN 0933-033X Series E-ISSN 2196-2812
finite
发表于 2025-3-22 17:26:33
Spinal Anesthesia for Cesarean Section,sion wavelength is estimated to be 224 nm for the AlN/GaN superlattice with one GaN-monolayer, which is remarkably shorter than that for Al-rich AlGaN alloys. The optical matrix element of such superlattice is found to be 57% relative to the GaN bulk value.
MITE
发表于 2025-3-22 22:32:36
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细菌等
发表于 2025-3-23 01:52:44
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deforestation
发表于 2025-3-23 06:33:16
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