HEIR 发表于 2025-3-21 16:33:46
书目名称Electronic Structure of Metal-Semiconductor Contacts影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0306421<br><br> <br><br>书目名称Electronic Structure of Metal-Semiconductor Contacts读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0306421<br><br> <br><br>aviator 发表于 2025-3-21 23:11:14
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Innovations in Communication Theories of the semiconductor depends on both the work function and the Fermi energy of the metal. Some arguments are put forward to the effect that a similar behaviour is expected for crystallographic orientations of the Si surface other than the (110). The calculations are actually in fair agreement with experimental data on (111) surfaces.专心 发表于 2025-3-22 08:18:11
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Innovations in Chemical Biology in many electronic properties associated with the quantum mechanical valence state. This transition divides crystalline solids into two well-defined classes: “covalent” and “ionic.” Within each class there is a unifying character to the observed properties.Kidney-Failure 发表于 2025-3-22 21:01:45
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Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern, Spannung, die Elektronen bis zu einem gewissen Grade vom .nach dem ...überquellen und dort eine räumlich verteilte Ladung bilden. Je nachdem das Konzentrationsgefälle der Elektronen in Richtung oder gegen die Richtung des Feldes wirkt, sollen große oder kleine Ströme fließen.北极人 发表于 2025-3-23 05:17:56
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