以烟熏消毒
发表于 2025-3-28 15:44:40
Fundamental Transition in The Electronic Nature of Solids, which is developed between constituent atoms. For example, the familiar Group-IV semiconductors are totally covalent and exhibit characteristics which are qualitatively different from highly ionic materials, such as the alkali halides. However, many materials of fundamental and practical importance
灌溉
发表于 2025-3-28 19:57:47
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小鹿
发表于 2025-3-29 02:50:53
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Encapsulate
发表于 2025-3-29 07:01:30
Electronic structure of a metal-semiconductor interface,Local densities of states and charge densities are used to study states near the interface. At the Si surface, a high density of extra states is found in the energy range of the Si fundamental gap. These states are bulklike in jellium and decay into Si with a high concentration of charge in the dang
可行
发表于 2025-3-29 08:16:43
Ionicity and the theory of Schottky barriers,lectronic structure of four separate interfaces consisting of jellium (of Al density) in contact with the (111) surface of Si and the (110) surfaces of GaAs, ZnSe, and ZnS is investigated through the use of a self-consistent pseudopotential method. The barrier height and the surface density of state
勉强
发表于 2025-3-29 12:02:15
Chemical trends in metal-semiconductor barrier heights,nic semiconductors is not that clearly defined and the outcome is diffused by data scattering. Furthermore, the data indicate .saturation of the interface parameter .for .= 1. Considering the definition of ., it follows that the true Schottky limit should occur for some number .≈: 2.0-3.0 rather tha
可能性
发表于 2025-3-29 18:40:33
Transition in Schottky Barrier Formation with Chemical Reactivity,rrier heights of metals on individual compound semiconductors exhibit a sharp transition as a function of heat of reaction, increasing dramatically above an experimentally determined critical heat of reaction.
歪曲道理
发表于 2025-3-29 19:53:50
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招致
发表于 2025-3-30 03:44:45
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迷住
发表于 2025-3-30 04:08:25
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