歪曲道理
发表于 2025-3-23 10:50:18
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Admonish
发表于 2025-3-23 15:05:37
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Congruous
发表于 2025-3-23 19:50:12
,Fabrication, Characterization and Parameter Extraction of InAs Nanowire-Based Device,ive as introduction on the growth method, fabrication techniques, characterization methods of materials and devices, measurement systems, and way to extract the electrical parameters of InAs nanowires FET devices.
假装是我
发表于 2025-3-23 23:05:21
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厨房里面
发表于 2025-3-24 04:57:02
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corn732
发表于 2025-3-24 06:34:50
Ein- und Zwei-Stichprobentests,an 10 nm could be needed in field-effect transistors (FETs) as the channel length scales down to tens of nanometers to improve the performance and increase the integration. In this chapter, we report FETs based on ultrathin wurtzite-structured InAs NWs, with the smallest NW diameter being 7.2 nm. Th
Humble
发表于 2025-3-24 10:41:40
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incision
发表于 2025-3-24 18:55:40
Die innere Struktur des sozialen Verbandes, growth systems, MBE and MOCVD. Bases on the statistical data of more than 70 InAs nanowires back-gated FETs whose diameter range from 16 nm to more than 100 nm, we find that when the diameter of InAs nanowires is relatively small, most of the MOCVD-grown InAs nanowires have similar electron mobilit
catagen
发表于 2025-3-24 20:00:17
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patriot
发表于 2025-3-24 23:59:03
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