DIS
发表于 2025-3-25 06:40:10
Springer Theseshttp://image.papertrans.cn/e/image/305752.jpg
crease
发表于 2025-3-25 08:15:23
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打火石
发表于 2025-3-25 13:57:15
,Fabrication, Characterization and Parameter Extraction of InAs Nanowire-Based Device,ive as introduction on the growth method, fabrication techniques, characterization methods of materials and devices, measurement systems, and way to extract the electrical parameters of InAs nanowires FET devices.
Interferons
发表于 2025-3-25 19:20:09
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Arroyo
发表于 2025-3-25 22:08:11
Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires,wires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs N
材料等
发表于 2025-3-26 00:14:23
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粗鲁性质
发表于 2025-3-26 07:03:13
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observatory
发表于 2025-3-26 12:28:09
Grundlegende Operationen der Farbenchemiee of the most promising candidate. In this chapter, we introduce the advantages of InAs nanowire on electronic devices and the development status of InAs nanowire electronic devices. Also, the topic ideas and chapter arrangements of this thesis are presented.
名次后缀
发表于 2025-3-26 14:06:02
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瘙痒
发表于 2025-3-26 18:42:33
Introduction,e of the most promising candidate. In this chapter, we introduce the advantages of InAs nanowire on electronic devices and the development status of InAs nanowire electronic devices. Also, the topic ideas and chapter arrangements of this thesis are presented.