Traction
发表于 2025-3-21 18:24:22
书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0305752<br><br> <br><br>书目名称Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0305752<br><br> <br><br>
炸坏
发表于 2025-3-21 22:25:03
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors
项目
发表于 2025-3-22 01:06:45
Influence of Crystal Phase and Orientation on Electrical Properties of InAs Nanowires,on concentration at VBG = 0 V than the ZB InAs NWs, these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical properties of the InAs NWs. The good ohmic
取之不竭
发表于 2025-3-22 07:10:38
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Between
发表于 2025-3-22 09:30:22
2190-5053 Ts they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and pro978-981-13-3444-3Series ISSN 2190-5053 Series E-ISSN 2190-5061
defeatist
发表于 2025-3-22 13:59:49
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defeatist
发表于 2025-3-22 17:10:17
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轻弹
发表于 2025-3-22 22:00:22
Springer Nature Singapore Pte Ltd. 2018
饰带
发表于 2025-3-23 02:23:13
Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors978-981-13-3444-3Series ISSN 2190-5053 Series E-ISSN 2190-5061
Optimum
发表于 2025-3-23 08:41:47
Kapitel IV: Eine Rekonstruktion der Scharia,In this chapter, our researches of the influence of the size, the crystal structure and the growth method on electrical properties of InAs nanowires are summarized. Also, the further researches on nanowire-based devices are forecasted.