oxidant
发表于 2025-3-23 12:39:53
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愤怒事实
发表于 2025-3-23 15:52:08
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Phenothiazines
发表于 2025-3-23 21:09:45
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美丽的写
发表于 2025-3-24 00:51:04
Hydrogen - Oxygen Interactions in Silicon,oming available from experiment as well as theory. This paper summarizes the experimental and theoretical work on H - 0 interactions, with emphasis on the issue of H-enhanced diffusion of interstitial 0. Preliminary results of molecular dynamics simulations are also presented.
护航舰
发表于 2025-3-24 02:39:42
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积习已深
发表于 2025-3-24 10:31:56
Roles of Structural Defects and Contaminants in Oxygen Precipitation in Silicon,n. Grown-in defects in Czochralski-grown silicon seem to be divided into two kinds of defects. One causes the degradation of gate oxide integrity and the other acts as the nucleation centers for oxygen precipitation at relatively low temperatures. The generation processes of these kinds of defects are discussed.
逗留
发表于 2025-3-24 13:03:23
Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment,) spectroscopy, or absorption and luminescence associated with electronic transitions involving the defect. In the course of this workshop, we will have the chance to learn in detail how each of these have contributed to our understanding of oxygen and its complexes in silicon.
MANIA
发表于 2025-3-24 17:07:46
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Comprise
发表于 2025-3-24 20:49:41
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FATAL
发表于 2025-3-25 00:52:22
The Role of Trivalent Oxygen in Electrically Active Complexes,ex. A third oxygen bond can also be formed in defect complexes with other impurities. Based on . calculations, stable complexes of trivalent oxygen with a Si self-interstitial (w/o the presence of hydrogen) or with nitrogen are predicted. The relation of these defects to thermal double donors and shallow thermal donors are discussed.