countenance
发表于 2025-3-30 09:15:59
http://reply.papertrans.cn/31/3009/300811/300811_51.png
Seminar
发表于 2025-3-30 14:13:20
Hydrogen - Oxygen Interactions in Silicon,s electrically inactive impurities, passivates many deep-level defects and some deep-level impurities, and creates its own electrically and optically active centers. Hydrogen also interacts with the A-center, and passivates O-related thermal donors (TDs) at low temperatures. However, the most exotic
琐事
发表于 2025-3-30 18:59:54
Oxygen Diffusion in Silicon: The Influence of Hydrogen, are extensively used in device applications. During thermal processing, depending on the processing parameters, the oxygen atoms aggregate to form clusters of various sizes and also Si0. precipitates . The precipitation of oxygen leads to the formation of extended defects in the silicon wafer, i
真繁荣
发表于 2025-3-31 00:10:49
http://reply.papertrans.cn/31/3009/300811/300811_54.png
incarcerate
发表于 2025-3-31 01:24:53
The Electronic Structure of the Oxygen Donor in Silicon from Piezospectroscopy,gen donor” defects with concentrations up to lO.cm. . Since this early discovery there have been numerous studies performed to determine the oxygen donor’s structure and the mechanism for its formation . In spite of a tremendous amount of effort, the atomic structure of the oxygen donor a
Conspiracy
发表于 2025-3-31 06:35:43
http://reply.papertrans.cn/31/3009/300811/300811_56.png
就职
发表于 2025-3-31 11:42:33
Roles of Structural Defects and Contaminants in Oxygen Precipitation in Silicon,ilicon crystals. Dislocations act as preferential nucleation centers of precipitates. Morphology of precipitates on dislocations depends on the temperature at which precipitation takes place. Precipitation of silicon oxide on dislocations immobilizes the dislocations and brings about high mechanical
温和女人
发表于 2025-3-31 15:25:17
Various Forms of Isolated Oxygen in Semiconductors,lth of information is therefore available on isolated oxygen in silicon, but it seems difficult to extrapolate to oxygen in other semiconductors because of differences in chemical reactivities and lattice relaxations. The aim of this review is to try to compare the situation in silicon with that in