要旨
发表于 2025-3-21 16:34:01
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使尴尬
发表于 2025-3-21 22:39:14
Recent Developments in Ovonic Threshold Switching Device Technologyterning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni
愉快吗
发表于 2025-3-22 02:46:11
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BLAZE
发表于 2025-3-22 08:11:43
,Zeichnen für Fortgeschrittene,terning and dry etching. It required the development of a conformal, inorganic passivation layer. That was achieved, assuring inherent high stability and long life. The switching material in the device has also been modified to incorporate hydrogen, which significantly improves the stability and uni
PLUMP
发表于 2025-3-22 12:21:03
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Disk199
发表于 2025-3-22 15:50:22
Book 1988h broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu
Disk199
发表于 2025-3-22 18:25:42
Dr. Henisch broadened his research interest to include the History of Photography. At the present time. Dr. Henisch holds parallel appointments as a Professor of Physics and a Professor of the History of Photography at Pennsylvania State University. He is a Fellow of the American Physical Society. the Institu978-1-4612-8299-0978-1-4613-1027-3
febrile
发表于 2025-3-22 23:40:53
Book 1988y held at the Institute for Amorphous Studies. Bloomfield Hills. Michigan. It is our great pleasure to be editors of the Festschrift volume to honor Heinz and his work. Professor Henisch has a long and distinguished career and has many accomplishments in semiconductor materials and devices. He has m
FLACK
发表于 2025-3-23 03:04:56
Switching and Memory Effects in Thin Amorphous Chalcogenide Films — Thermophonic Studiesurther, the results concur with a model where the sample heats during the delay time; the heating causes the fields to rearrange and a critical value is reached near an electrode, whereby a carrier generation process is encouraged.
FAST
发表于 2025-3-23 07:38:59
On the Impedance Calculation of Thick MIM Barriers of the (M.-I-M.) barrier leading directly to an incremental equivalent circuit representation is given. It is found that the device may be modeled satisfactorily in the low frequency range for all bias conditions by a resistor connected in parallel with a capacitor.