ellagic-acid
发表于 2025-3-26 22:49:09
Piezoresistivity in Semiconducting Ferroelectricslastic and thermal boundary conditions will be reviewed. An account of this phenomenon based upon recent models of ferroelectricity and grain boundary potential is given. A comparison to silicon and germanium is attempted.
VEN
发表于 2025-3-27 02:58:21
,Zeichnen für Fortgeschrittene,The paper deals with the consequences of a steady state minority carrier injection through a metal or a high-low junction into the bulk of a semiconductor. Depending on the nature of the semiconductor, the spatial distribution of the net recombination rate of injected minority carriers R occurs in two different ways:
SNEER
发表于 2025-3-27 07:14:07
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青少年
发表于 2025-3-27 10:49:35
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Synovial-Fluid
发表于 2025-3-27 17:39:11
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Femish
发表于 2025-3-27 19:05:24
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滑动
发表于 2025-3-28 01:50:10
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可触知
发表于 2025-3-28 04:20:53
Proper Capacitance Modeling for Devices with Distributed Space ChargeThe present paper derives from our previous work (1–3) on modeling the time dependence of ovonic threshold switches (OTS), and DIACS (4). It is also related to our analysis (5–8) of one carrier, space-charge controlled conduction in metal-insulator metal (MIM) structures.
Nomadic
发表于 2025-3-28 06:37:43
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Fracture
发表于 2025-3-28 10:48:51
Institute for Amorphous Studies Serieshttp://image.papertrans.cn/e/image/281461.jpg