方面
发表于 2025-3-21 19:37:59
书目名称Beyond Si-Based CMOS Devices影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0192659<br><br> <br><br>书目名称Beyond Si-Based CMOS Devices读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0192659<br><br> <br><br>
最高点
发表于 2025-3-21 22:09:28
M. Witko,R. Tokarz-Sobieraj,R. Grybośese applications have been made possible by scaling thanks to improvements in complexity and performance. In order to increase the historical cadence of integrated circuit scaling as dimensional scaling of CMOS inevitably approaches fundamental constraints, a number of pioneering and advancement of
尾巴
发表于 2025-3-22 01:15:20
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音乐会
发表于 2025-3-22 08:35:09
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Brain-Waves
发表于 2025-3-22 10:17:06
David A. Case,Louis Noodleman,Jian Lianical properties is grabbing worldwide market in the area of electronics, home appliances and medical field. The present book chapter emphasizes on graphene-based field effect transistor devices towards different applications. It comprehensively reviewed the synthesis of graphene, properties of gra
一起平行
发表于 2025-3-22 14:28:29
Metal-Ligand Interactions in Cu-Proteins,ces and energy production. The number of devices that focus on non-graphene monolayers has significantly increased due to the novel characteristics and applications arising from two-dimensional confinement. An attempt has been made here to comprehensively describe the present state of the technology
anthesis
发表于 2025-3-22 19:36:38
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fatuity
发表于 2025-3-23 00:41:28
Concepts in Heterogeneous Catalysis,s, and short-channel effects are responsible toward the degradation of the MOS devices. At this point of time, a device which exhibits low leakage and low subthreshold swing is much needed, and tunnel field-effect transistors (TFETs) reported to be a suitable alternative to MOSFETs. TFETs basically
可互换
发表于 2025-3-23 02:22:42
https://doi.org/10.1007/978-94-011-2822-3ve capacitance (NC) into their design. Negative capacitance field-effect transistor (NCFET) is quickly becoming a popular alternative technology that promises to increase the power efficiency of transistors by many times while still being compatible with the current CMOS fabrication method. The tran
Longitude
发表于 2025-3-23 06:53:35
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