妨碍议事
发表于 2025-3-28 17:13:28
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依法逮捕
发表于 2025-3-28 21:29:14
Negative Capacitance Field-Effect Transistor (NCFET): Strong Beyond CMOS Deviceve capacitance (NC) into their design. Negative capacitance field-effect transistor (NCFET) is quickly becoming a popular alternative technology that promises to increase the power efficiency of transistors by many times while still being compatible with the current CMOS fabrication method. The tran
CRASS
发表于 2025-3-29 02:30:55
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Contracture
发表于 2025-3-29 05:06:39
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急急忙忙
发表于 2025-3-29 08:43:04
Feedback Field-Effect Transistors/Zero Subthreshold Swing and Zero Impact Ionization FETy states of the potential barrier and wall. This positive feedback mechanism results in notable characteristics for FBFETs, including an impressive subthreshold swing of approximately 0 mV/decade at 300 K, a high on-/off-current ratio of around 10^10, and a well-defined saturation region. The power
RECUR
发表于 2025-3-29 13:24:33
Resistive-Gate Field-Effect Transistor: A Potential Steep-Slope Device suggested to improve their performance. Theoretically, steep-slope devices may allow low-voltage operation with acceptable leakage current by switching from the off to on state with a smaller change in gate voltage. This chapter includes ReFET that has been identified as a developing field-effect t
密码
发表于 2025-3-29 19:27:10
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指令
发表于 2025-3-29 22:03:31
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scotoma
发表于 2025-3-30 02:37:32
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脱水
发表于 2025-3-30 06:04:53
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