Monroe
发表于 2025-3-21 18:29:46
书目名称Bismuth-Containing Compounds影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0188882<br><br> <br><br>书目名称Bismuth-Containing Compounds读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0188882<br><br> <br><br>
不合
发表于 2025-3-21 21:46:15
Dilute Bismuthides on an InP Platform,lar to GaBiAs growths, low growth temperature and moderate Bi/As ratio are beneficial for bismuth to incorporate. The compositions of InGaBiAs samples are studied by high resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectrometry (RBS). The results from reciprocal space mapping
典型
发表于 2025-3-22 01:48:24
Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate, by laser reflectometry using a 632.8 nm beam. High-resolution X-ray diffraction, secondary ion mass spectroscopy, photoluminescence, and photoreflectance spectroscopy have been used to characterize the obtained GaAsBi layers. In analyzing the surface morphology, atomic force microscopy and scanning
卷发
发表于 2025-3-22 05:34:56
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projectile
发表于 2025-3-22 10:41:52
Localized States in GaAsBi and GaAs/GaAsBi Heterostructures,ave been proven to be smooth without distinct segregation and stable up to 700 °C. While the interface state density of ~9 × 10. cm. eV. in a GaAs/GaAs.Bi. heterointerface cannot be reduced by annealing, it can be reduced by half by the insertion of a Bi graded layer into the heterointerface, presum
abracadabra
发表于 2025-3-22 14:06:06
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LIEN
发表于 2025-3-22 17:51:51
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文艺
发表于 2025-3-23 00:29:43
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事先无准备
发表于 2025-3-23 05:03:33
Krankheiten der Verdauungsorgane,lar to GaBiAs growths, low growth temperature and moderate Bi/As ratio are beneficial for bismuth to incorporate. The compositions of InGaBiAs samples are studied by high resolution X-ray diffraction (HRXRD) and Rutherford backscattering spectrometry (RBS). The results from reciprocal space mapping
LARK
发表于 2025-3-23 07:52:21
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