容易生皱纹
发表于 2025-3-25 05:23:27
Spectroscopic Ellipsometry of AP-MOVPE-Grown GaAs,Bi, Dilute Alloys,is determined by using room temperature spectroscopic ellipsometry (SE). The interband transition energies in the energy range 1.4–5.4 eV are resolved using a line shape fitting on the numerically calculated dielectric function second derivatives. The bismuth effect on the critical point (CP) parame
召集
发表于 2025-3-25 08:33:16
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革新
发表于 2025-3-25 12:48:33
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取之不竭
发表于 2025-3-25 19:32:17
,Unusual Bi-Containing Surface Layers of III–V Compound Semiconductors,iconductor-based materials, including bismuth (Bi) containing III–V films, for improved electronics and optoelectronics devices. After that the general properties of the III–V(100) surfaces, which usually undergo strong atomic rearrangements (reconstructions), are reviewed. Before focusing on the un
Omnipotent
发表于 2025-3-25 23:36:47
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宣誓书
发表于 2025-3-26 03:17:55
Vapor Phase Deposition Synthesis of Bismuth-Based Topological Insulator Nanoplates and Their Electrtors promising in future spintronics and topological quantum computation. Using vapor phase deposition method, we have synthesized few-layer topological insulator bismuth telluride, bismuth selenide, and ternary bismuth-based nanoplates with hexagonal, triangular, and truncated triangular nanostruct
评论性
发表于 2025-3-26 05:28:03
Syntheses and Properties of Some Bi-Containing Compounds with Noncentrosymmetric Structure,A. (A = S, Se, Te) are constructed in views of “genome” BiA. pyramid and InA. tetrahedron. Then, the crystal structures of these compounds are predicted or reproduced to show their non-centrosymmetry based on global optimization evolutionary methodology. Thirdly, the ab initio computations of band s
切碎
发表于 2025-3-26 10:39:46
Bismuth(V)-Containing Semiconductor Compounds and Applications in Heterogeneous Photocatalysis,rch for active semiconductor photocatalysts specially for solar energy applications is one of the most challenging tasks. The bismuth(V)-containing photocatalysts have gained great significance due to their unique electronic/energy band structures. The preparation techniques, physical–chemical prope
不可接触
发表于 2025-3-26 15:27:48
Bismuth-Containing Compounds978-1-4614-8121-8Series ISSN 0933-033X Series E-ISSN 2196-2812
EXALT
发表于 2025-3-26 20:11:25
,Krankheiten der Bauchspeicheldrüse, in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in mid-infrared (Mid-IR) optoelectronics. In this chapter, we review recent progresses on epitaxy and characterizations of novel bismides, i.e., GaSb.Bi., InSb.Bi., InAs.Bi., and InAsSbBi. Although these