cerebral-cortex
发表于 2025-3-21 19:08:00
书目名称Amorphous and Crystalline Silicon Carbide IV影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0154738<br><br> <br><br>书目名称Amorphous and Crystalline Silicon Carbide IV读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0154738<br><br> <br><br>
adj忧郁的
发表于 2025-3-21 23:36:26
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Graves’-disease
发表于 2025-3-22 03:35:59
https://doi.org/10.1007/978-3-642-84804-9SiGe; band structure; crystal; development; diodes; electron; electronic material; hydrogen; laser; material;
Licentious
发表于 2025-3-22 08:02:02
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NAV
发表于 2025-3-22 09:15:11
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mydriatic
发表于 2025-3-22 13:56:34
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ornithology
发表于 2025-3-22 19:07:15
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Acclaim
发表于 2025-3-22 23:21:22
https://doi.org/10.1007/978-3-662-28982-2ilms on vicinal (0001) 6H-SiC wafers. Processes based on this new understanding have been developed. For example, 3C-SiC and 6H-SiC films were grown on separate 1-mm-square mesas on the same 6H-SiC substrate. Most of the 3C films were free of double positioning boundaries (DPBs), and had a reduced d
讥讽
发表于 2025-3-23 05:18:56
https://doi.org/10.1007/978-3-662-31626-9th of 6H-SiC is achieved at a temperature as low as 1200°C governed by step-flowgrowth on off-oriented {0001} faces and at 1100°C on (0.1.)C faces. The activation energy of growth rate shows a very small value of 3.0kcal/mole. This can be quantitatively analyzed on the basis of a stagnant layer mode
羽毛长成
发表于 2025-3-23 07:53:04
https://doi.org/10.1007/978-3-662-31626-9.. The crystallinity of the grown SiC layer is influenced by orientation of Si substrates. A single crystalline 3C-SiC has been grown on Si(111) face, while a polycrystalline 3C-SiC on Si (001) face. A growth rate of SiC with alternate gas supply is almost 3 ML/cycle and independent of the duration