sulcus
发表于 2025-3-23 11:42:32
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正式演说
发表于 2025-3-23 16:36:10
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ALIEN
发表于 2025-3-23 20:09:06
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爵士乐
发表于 2025-3-24 00:28:11
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accrete
发表于 2025-3-24 04:09:29
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外貌
发表于 2025-3-24 07:50:13
Auswirkungen auf die Konzernsteuerpolitik°C is observed both for Si.H. exposures onto a carbon terminated surface and for C.H. exposures onto a silicon covered surface. Further, about one monolayer of a silicon-covered surface is etched by exposing to oxygen at 1050°C. The resultant etched surface is carbon-covered surface.
CLASH
发表于 2025-3-24 13:49:42
Problemstellung und Zielsetzungerials and pressure are reported in this paper. A SiC source with unintentional impurities resulted in the creation of a number of striated defects during the initial stage of crystal growth. Three kinds of etch pits (EP-1, EP-2 and EP-3) were observed. The incidence of small-size EP-3 etch pits was
违反
发表于 2025-3-24 17:56:33
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ANTH
发表于 2025-3-24 19:01:54
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碎石头
发表于 2025-3-25 02:46:56
,Die Bausparkassen als Kooperationsträger,ting in extreme environments: high temperature, radiation etc. In recent years considerable progress has been achieved in fabrication of semiconductor devices in 3C-SiC. However, the problem of producing good-quality and low-cost substrates of large enough dimensions is still unsolved. CVD- growth o