抚育
发表于 2025-4-1 02:04:13
,Growth and characterization of II–VI semiconductor lasers,from above 10 V to below 2V at high current densities by a multilayer contact with ZnSe and ZnTe layers with variing thickness ratio. By the replacement of MgZnSSe with a ZnSe/MgZnSSe superlattice as material for the cladding layers in the laser diode, doping levels could be increased by a factor of
amplitude
发表于 2025-4-1 06:38:57
,Many-body theory for II–VI semiconductor laser media,h treats the relevant quasi-particles (photons, carriers and plasmons) within a fully quantum-mechanical footing. In order to consistently describe the gain lineshape and spectral position of lasing, it is demonstrated that both Coulomb effects within mean-field contributions and higher order many-b
fetter
发表于 2025-4-1 11:10:43
SiC: Polar properties and their influence on technology and devices,harge density distribution along the ‘Si-C’ bond, nearly the complete bond charge is closely located at the carbon atom. Therefore, SiC is piezoelectric and shows a strong ‘Reststrahl’ absorption which allows the investigation of optical transitions due to impurities (vibrational and electronic tran
GUEER
发表于 2025-4-1 15:56:12
,Growth mechanisms of SiC on α-SiC(0001) prepared by solid-source molecular beam epitaxy, results demonstrate that similar SiC growth mechanisms act in all vapour phase epitaxial techniques. They also show that the control of the Si/C ratio and the super-saturation (.) is essential for the growth mode and the kind of polytype grown. Low temperature (.<1200 °C) deposition on on-axis SiC
柳树；枯黄
发表于 2025-4-1 20:57:29
http://reply.papertrans.cn/15/1499/149818/149818_65.png
ingestion
发表于 2025-4-1 22:46:02
http://reply.papertrans.cn/15/1499/149818/149818_66.png