谈判
发表于 2025-3-26 22:36:35
,Si1−x−yGexCy alloys: Growth and properties of a new semiconducting material,al properties, and the influence of C atoms on band structure and charge carrier properties will be discussed. We show how lower carbon concentrations can influence dopant diffusion, without affecting strain and band alignment. Finally, we present possible applications of this new semiconducting material.
NEG
发表于 2025-3-27 04:18:51
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Evacuate
发表于 2025-3-27 08:25:14
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paroxysm
发表于 2025-3-27 12:37:45
Festkörperprobleme978-3-540-44558-6Series ISSN 1438-4329 Series E-ISSN 1617-5034
Flounder
发表于 2025-3-27 16:13:27
Sung Yong Jo,Jeongmok Ha,Hong Jeongrinsic band-edge luminescence and excitons localized at boron acceptors introduced into the layers by doping during layer deposition or by ion implantation. The problem of shallow donors is also addressed, and in particular promising recent electrical and optical data on phosphorus-doped diamond layers are presented.
易于交谈
发表于 2025-3-27 21:15:21
Advances in Solid State Physicshttp://image.papertrans.cn/a/image/149818.jpg
矛盾心理
发表于 2025-3-27 22:21:14
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罐里有戒指
发表于 2025-3-28 04:32:55
978-3-662-16127-2Springer Fachmedien Wiesbaden 1999
迅速飞过
发表于 2025-3-28 06:57:20
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纯朴
发表于 2025-3-28 13:56:16
Thierry Bay,Romain Raffin,Marc Danielvering the UV-to-blue spectral region. Recent advances in group III-nitride layer growth using MBE and, in particular, MOCVD allow the preparation of high-quality n- and p- type conducting GaN layers as well as GaN/(AlGa)N/(InGa)N hetero- and quantum-structures, in spite of the lack of lattice match