Merited
发表于 2025-3-30 10:30:28
Satish Kumar Singh,Partha Roy,P. Nagabhushantions (SPE) and collective spin-density and charge-density excitations (SDE and CDE). This allows us to determine the influence of many-particle interactions in the quantum dots. Moreover, by a detailed analysis of wave-vector and magnetic-field dependent measurements, we can identify transitions be
inflame
发表于 2025-3-30 14:02:27
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凹室
发表于 2025-3-30 18:55:00
https://doi.org/10.1007/978-3-031-11346-8leads. A powerlaw scaling behaviour depending on the number of opening leads was observed for the weak coupling regime in both types of experiments, in agreement with theories based on the Tomonaga-Luttinger formalism. For stronger coupling (.>0.5), in asymetric quantum dots with only one opening le
确定方向
发表于 2025-3-30 20:51:47
https://doi.org/10.1007/978-981-15-4015-8carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. The strong localization of carriers in the QDs leads to non-thermal population statistics directly impacting the gain and threshold. The excitonic nature of recombination leads to a linea
作呕
发表于 2025-3-31 01:01:55
https://doi.org/10.1007/978-981-15-4015-8 of the light? and 2. When does SL occur? Whereas the first question is still not completely answered, the second question could be resolved within the hydrodynamical/chemical approach towards sonoluminescence we elaborated in the last three years. For SL to occur, the bubble collapse has to be viol
anaphylaxis
发表于 2025-3-31 06:46:04
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反省
发表于 2025-3-31 13:09:00
Computer Vision and Image Processinged for a kinetic equation, which is formulated in terms of disorder eigenstates and includes phonon relaxation and radiative exciton, decay. Depending on the excitation scheme, the solutions describe photoluminescence, photoluminescence excitation spectroscopy, or absorption. Their dependence on tim
新字
发表于 2025-3-31 15:20:13
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道学气
发表于 2025-3-31 18:49:40
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Nerve-Block
发表于 2025-3-31 22:07:28
Laser processes in group-III nitrides, electronics. The recent first realization of an InGaN multi-quantum-well laser diode is a great progress in the development of ultraviolet optoelectronic devices. In spite of this and other successes, there is a continuing discussion about the processes responsible for the laser emission. The prese