Daguerreotype
发表于 2025-3-21 18:02:44
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颂扬本人
发表于 2025-3-22 00:16:25
Transport and recombination in hydrogenated amorphous silicon,its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.
Barter
发表于 2025-3-22 03:38:25
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intertwine
发表于 2025-3-22 07:40:20
https://doi.org/10.1007/978-3-319-16817-3imensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to . . = h/
枯燥
发表于 2025-3-22 11:56:01
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reject
发表于 2025-3-22 16:23:13
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itinerary
发表于 2025-3-22 20:54:26
Quan Zhou,Shu Cai,Shaojun Zhu,Baoyu Zhengications experimental data on the electrical conductivity and its temperature and frequency dependence are reviewed. These data are discussed within the framework of a model involving fluctuation-induced tunneling between macroscopic inhomogeneities and energy dependent hopping of charge carriers be
oncologist
发表于 2025-3-22 21:21:38
https://doi.org/10.1007/978-3-319-16808-1its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.
凶兆
发表于 2025-3-23 01:24:31
Lecture Notes in Computer Scienceht of as an ., the defect providing an environment in which a net attraction can develop between the otherwise Coulombically repulsive carriers. Evidence previously cited for this behavior in selected liquid and solid state systems will be reviewed. Recently, the first direct and unambiguous demonst
保留
发表于 2025-3-23 09:00:14
Aparna Taneja,Luca Ballan,Marc Pollefeysdoped Si in addition to isolated, probably substitutional, atoms. The tendency to form point-defect complexes increases from Te to O with increasing electronegativity and decreasing tetrahedral atomic radii. This tendency culminates for oxygen which may form a series of high-order complexes (“therma