tariff
发表于 2025-3-30 08:18:46
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perjury
发表于 2025-3-30 14:31:40
Chalcogens as point defects in silicon,doped Si in addition to isolated, probably substitutional, atoms. The tendency to form point-defect complexes increases from Te to O with increasing electronegativity and decreasing tetrahedral atomic radii. This tendency culminates for oxygen which may form a series of high-order complexes (“therma