UNT 发表于 2025-3-23 10:27:36
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T. A. Sumesh,Vinay Namboodiri,Phalguni Guptanductor devices, especially field-effect transistors..In this paper first the present status of commercially available GaAs-MESFETs (homostructure FET) is described. Then means of improving these devices by shrinking the dimensions and increasing the dopant concentrations are discussed. The possibilMammal 发表于 2025-3-23 22:32:48
https://doi.org/10.1007/978-981-15-1387-9s will be available. Since the required cooling power usually is quite small the design of such cryocoolers is governed by factors like electromagnetic interference signals, mechanical vibrations, and long maintenance free operation periods. Two cryocoolers, which are presently being further developcardiopulmonary 发表于 2025-3-24 02:23:02
Festkörperprobleme 24978-3-540-75374-2Series ISSN 1438-4329 Series E-ISSN 1617-5034臭了生气 发表于 2025-3-24 10:29:15
1438-4329 Overview: 978-3-540-75374-2Series ISSN 1438-4329 Series E-ISSN 1617-5034逢迎春日 发表于 2025-3-24 13:24:23
https://doi.org/10.1007/978-3-319-16808-1its low density of defect states in the gap. This paper reviews important aspects of transport and recombination of excess carriers in glow discharge deposited a-Si:H. Special emphasis is given to the still unsolved problem of light induced defects.Temporal-Lobe 发表于 2025-3-24 16:07:35
Advances in Solid State Physicshttp://image.papertrans.cn/a/image/149813.jpg我们的面粉 发表于 2025-3-24 19:34:59
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Springer-Verlag Berlin Heidelberg 1984