使害羞
发表于 2025-3-23 12:56:55
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carotid-bruit
发表于 2025-3-23 14:34:18
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blithe
发表于 2025-3-23 21:38:42
Björn Stenger,Thomas Woodley,Roberto Cipollae. We observe current steps in the . characteristics of a GaAs-AlAs tunnelling structure with self-assembled InAs quantum dots embedded in the AlAs barrier. The steps originate from resonant tunnelling through individual InAs quantum dots. In a magnetic field the Zeeman splitting of the quantized do
carotenoids
发表于 2025-3-24 01:42:35
https://doi.org/10.1007/978-3-642-12848-6ced CdSe reorganisation and not by the Stranski-Krastanov growth mode. Stacking fault formation is enhanced in QD stacks and reduced by using strain compensating ZnSSe spacer layers. For a fivefold QD stack in a laser structure a .. value of about 1200 K up to 100 K was determined by threshold measu
Affiliation
发表于 2025-3-24 05:00:27
Andrew Hogue,Michael R. M. Jenkinn on ZnCdSe quantum dots as the active material in a laser diode and their temperature dependece show a transition from 0D-like to 2D-like characteristics limiting their capabiblity for devices. Furthermore, optimisation of electrical contacts due to a post-growth increase of the p-type doping level
Adjourn
发表于 2025-3-24 09:02:11
Rui Shen,Gaopeng Gou,Irene Cheng,Anup Basued from solid state theoretical concepts. Starting from advances in photonic band structure computations which we apply to structures containing dispersive components, we show how defect structures can be efficiently treated with the help of photonic Wannier functions. In addition, nonlinear PCs may
mutineer
发表于 2025-3-24 13:18:20
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用肘
发表于 2025-3-24 15:07:37
Andrew Hogue,Michael R. M. Jenkine at least partly attributed to the high bond polarity and to doping limits of the conventional II–VI compounds, such as ZnSe. Beryllium chalcogenides have a considerable potential to overcome these problems. Therefore, binary, ternary or quaternary Be chalcogenide layers or superlattices may be app
兴奋过度
发表于 2025-3-24 22:23:45
Andrew Hogue,Michael R. M. Jenkinoration of magnetic impurities allows to fabricate semimagnetic semiconductors, which are potentially ferromagnetic at room temperature. Recent results on the MOVPE growth of ZnO will be reported and compared to the status of MBE-ZnO material. The optimization of the MOVPE process on various substra
言行自由
发表于 2025-3-25 02:35:23
Andrew Hogue,Michael R. M. Jenkins/ (In,Ga)As light emitting diodes (LED) with injection layers of the metals Fe or MnAs. The circular polarization degree of the emitted light reveals a spin polarization for recombining electrons of about 1.5% to 2%. Time-resolved data on spin relaxation times indicate that the actual spin injectio