KEN
发表于 2025-3-21 18:46:09
书目名称Variation-Aware Advanced CMOS Devices and SRAM影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0980553<br><br> <br><br>书目名称Variation-Aware Advanced CMOS Devices and SRAM读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0980553<br><br> <br><br>
HARP
发表于 2025-3-21 22:04:51
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领巾
发表于 2025-3-22 00:40:23
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Arctic
发表于 2025-3-22 07:52:16
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Fillet,Filet
发表于 2025-3-22 11:22:37
Applications in Static Random Access Memory (SRAM)Continuous efforts to shrink the physical size of transistors enable the integration of a larger number of transistors on a single chip.
Sigmoidoscopy
发表于 2025-3-22 14:56:39
Changhwan ShinOffers an insightful overview of the key techniques in variation-immune CMOS device designs.Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random va
plasma
发表于 2025-3-22 18:17:00
Quasi-Planar Trigate (QPT) Bulk MOSFETof integrated circuit (IC) chips has intensified the process-induced random variation .
温室
发表于 2025-3-22 23:24:22
Tunnel FET (TFET) 300 K) is a main bottleneck in scaling down the power supply voltage (..) as well as extensively reducing the power consumption in integrated circuits (ICs). As the gate voltage lowers the height of the channel potential barrier, the electrons in the source region move into channel region by the thermionic emission process.
Neutropenia
发表于 2025-3-23 04:28:40
Springer Series in Advanced Microelectronicshttp://image.papertrans.cn/v/image/980553.jpg
DOLT
发表于 2025-3-23 09:13:50
https://doi.org/10.1007/978-94-017-7597-7CMOS Device Designs; Integrated circuits; Line Edge Roughness; MOSFET; Process-Induced Random Variation;