使人入神
发表于 2025-3-30 08:59:48
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Anticonvulsants
发表于 2025-3-30 15:52:20
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疏远天际
发表于 2025-3-30 17:39:01
Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method/GaN HEMT epitaxial structure. Capacitance-Voltage (C–V) and Conductance-Voltage (G–V) measurements with frequency (1 kHz – 10 MHz) and temperature (25 and 250 °C) variations have been performed on large area Schottky pad having area 150 µm. × 150 µm.. Two different types of traps have been observed