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书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0920106<br><br> <br><br>书目名称The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0920106<br><br> <br><br>
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第120106主题贴--第2楼 (沙发)
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