Fecundity 发表于 2025-3-25 03:32:19

http://reply.papertrans.cn/89/8838/883748/883748_21.png

Ventilator 发表于 2025-3-25 08:38:56

Book 1989ools were a research curiosity and in general were mistrusted by most designers and test engineers. In those days the programs were not user friendly, models were inadequate, and the algorithms were not very robust. The demand for simulation tools has been driven by the increasing complexity of inte

ALE 发表于 2025-3-25 13:10:25

controlled condensation of silanols that are suitable for the synthesis of organic-inorganic hybrid materials. Thus, silicon-based chemistry played a prominent role in the evolution of dendrimer chemistry , and it did not take long until the first examples of silicon-containing hyperbranched p

改革运动 发表于 2025-3-25 19:31:11

http://reply.papertrans.cn/89/8838/883748/883748_24.png

Interlocking 发表于 2025-3-25 21:18:00

Vasant B. Rao,David V. Overhauser,Timothy N. Trick,Ibrahim N. Hajjoiety. The carbon moiety can contain another silsesquioxane structure to form the so-called bridging class of silsesquioxanes. It can be an aryl or alkyl fragment with or without unsaturation and it can contain functionality such as amino groups or epoxy groups. In the field of silicone science a sh

冲突 发表于 2025-3-26 02:44:55

Vasant B. Rao,David V. Overhauser,Timothy N. Trick,Ibrahim N. Hajjerties such as thermal and oxidative stability, low surface tension, gas permeability, excellent dielectric properties, physiological inertness and moisture resistance . Because of these properties silicones find a tremendous number of applications. Modifications of polysiloxane side groups are

CAJ 发表于 2025-3-26 05:43:47

http://reply.papertrans.cn/89/8838/883748/883748_27.png

厚颜无耻 发表于 2025-3-26 09:11:21

http://reply.papertrans.cn/89/8838/883748/883748_28.png

CHURL 发表于 2025-3-26 15:05:18

http://reply.papertrans.cn/89/8838/883748/883748_29.png

COMMA 发表于 2025-3-26 18:01:06

h will permit the creation of the long-dreamed chip-to-chip and system-to-system optical communications. Direct epitaxial growth of semiconductor III–V compounds on Si substrates is one of the most promising candidates for the fabrication of photonics devices on the Si platform. III–V quantum dots (
页: 1 2 [3] 4
查看完整版本: Titlebook: Switch-Level Timing Simulation of MOS VLSI Circuits; Vasant B. Rao,David V. Overhauser,Ibrahim N. Hajj Book 1989 Kluwer Academic Publisher