稀少 发表于 2025-3-21 19:57:56
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Superconducting Gallium Implanted Germanium,and at the same time to avoid dopant clustering. In strong contrast to all other doping techniques, ion implantation is not limited to the equilibrium solid solubility of the dopants in the host material. Furthermore, it is widely used in nowadays microelectronics technology which makes this process交响乐 发表于 2025-3-22 23:52:46
Structural Changes in SiGe/Si Layers Induced by Fast Crystallization,: Segregation of Ge to nanometer-scale cellular network and islands: effect of SiGe composition and crystallization velocity; Morphology and atomic structure of swift heavy ion-induced discontinuous tracks in SiGe alloy layers as a result of fast segregation; Pulsed laser modification of Ge and GeSn淡紫色花 发表于 2025-3-23 03:23:10
Sub-nanosecond Thermal Spike Induced Nanostructuring of Thin Solid Films Under Swift Heavy Ion (SHIation of a-Si/c-Si nanostructures in a silicon nitride matrix..(i) Metal nanoparticles embedded in a thin film matrix belong to a class of materials that has potential applications as optical and magnetic sensors, storage, memory devices, field emission display etc. The nanoparticle size and shape,Scintillations 发表于 2025-3-23 05:54:09
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