chuckle
发表于 2025-3-27 00:50:18
Inorganic Semiconductors and Passivation Layerstor materials described here include the group-IV (Si, Ge, and a-Si:H), III–V (GaAs, GaP, InP, InAs, and AlAs), II–VI (CdTe, CdS, ZnTe, ZnSe, and ZnS), I–III–VI. (CuInSe. and CuGaSe.) and I.–II–IV–VI. (Cu.ZnSnSe., Cu.ZnSnS. and Cu.ZnGeSe.) semiconductors. For a-Si:H, Cu(In,Ga)Se. and Cu.ZnSn(S,Se).-
COKE
发表于 2025-3-27 02:40:09
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BLOT
发表于 2025-3-27 05:27:36
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细微差别
发表于 2025-3-27 10:22:19
Transparent Conductive Oxidesevices, are summarized. The TCO materials described here include In.O.:Sn (ITO), In.O.:H, InZnO, SnO.:F, TiO., and ZnO:Al (or Ga). Oxide layers such as MoO., NiO, and WO. are often employed to improve electronic properties at semiconductor interfaces and the optical data of these TCO layers are also
narcotic
发表于 2025-3-27 13:55:47
Metalsre summarized. The metals described here include the group-Ib (Cu, Ag, Au), IIa (Mg), IIIb (Al), IVa (Ti), VIa (Cr, Mo, W), and VIII (Ni, Pt) metals. The optical constants of C (graphite), which has been applied widely for CdTe solar cells, are also shown. It is established in this chapter that the
准则
发表于 2025-3-27 21:28:32
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entrance
发表于 2025-3-27 23:38:04
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languor
发表于 2025-3-28 03:35:18
Introduction,ptical and recombination loss analysis based on external quantum efficiency characterization is emphasized. By comparing the absorption spectra of various solar cell materials, the optical properties of semiconductors are further discussed. This chapter will also provide an overview for the contents of subsequent chapters in this book.
柔软
发表于 2025-3-28 09:23:09
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套索
发表于 2025-3-28 10:55:30
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