Metamorphosis
发表于 2025-3-27 00:43:28
A Programmable Tool for Interactive Wafer-State Level Data Processing,This paper presents a tool for initial and intermediate data processing at waferstate level. Geometric operations and analytical attribute calculations are combined with the graphical user interface and with some TCAD shell functionality to reduce the effort of both manual editing and automated operations within complex simulation flows.
休闲
发表于 2025-3-27 02:35:03
http://reply.papertrans.cn/87/8677/867644/867644_32.png
支形吊灯
发表于 2025-3-27 06:32:03
http://reply.papertrans.cn/87/8677/867644/867644_33.png
tooth-decay
发表于 2025-3-27 11:52:22
Application of the Two-dimensional Numerical Simulation for the Description of Semiconductor Gas SeFurther we give an application example for the simulation of the sensitive reactions and the electronic device in their exchange. For that we use a conductivity type gas sensor with a polycrystalline ZnO active layer.
公理
发表于 2025-3-27 13:47:46
An Improved Calibration Methodology for Modeling Advanced Isolation Technologies,on of the material properties of silicon nitride, an improved parameter set for the stress dependent oxidation models is derived. The calculated substrate stress using this new parameter set is compared with micro-raman spectroscopy stress measurements to validate the calibration methodology.
广大
发表于 2025-3-27 19:58:46
http://reply.papertrans.cn/87/8677/867644/867644_36.png
过于平凡
发表于 2025-3-28 01:09:06
Layout Design Rule Generation with TCAD Tools for Manufacturing,process and device simulations were used to estimate parametric yield, while functional yield was predicted with state-of-theart yield modeling tools. A spectrum of TCAD tools was therefore capable of estimating the resulting number of good chips per wafer for different sets of VLSI layout design rules.
打折
发表于 2025-3-28 03:37:08
Cellular Automata Simulation of GaAs-IMPATT-Diodes,l accuracy. With both methods calculated results of stationary and time-dependent bulk transport quantities of GaAs and stationary transport characteristics of a GaAs-IMPATT-diode for D-Band applications will be presented and compared in detail.
incarcerate
发表于 2025-3-28 06:40:38
Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface Staly determined by deep-acceptor-like state. Depending on whether it acts as an electron trap or a hole trap, the turn-on characteristics change drastically. Physical mechanism of slow transients due to surface states is discussed.
演绎
发表于 2025-3-28 14:16:50
http://reply.papertrans.cn/87/8677/867644/867644_40.png