Abeyance
发表于 2025-3-21 18:42:56
书目名称Simulation of Semiconductor Devices and Processes影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0867643<br><br> <br><br>书目名称Simulation of Semiconductor Devices and Processes读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0867643<br><br> <br><br>
commonsense
发表于 2025-3-21 23:36:55
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旧石器时代
发表于 2025-3-22 01:46:58
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大炮
发表于 2025-3-22 05:20:10
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四目在模仿
发表于 2025-3-22 12:36:57
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AVOW
发表于 2025-3-22 15:18:02
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reflection
发表于 2025-3-22 19:39:19
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fixed-joint
发表于 2025-3-22 21:28:23
Simulation of Self-Heating Effects in a Power p-i-n Diode,rigorous electrothermal model implemented in the device/circuit simulator . . Results of steady-state and high-voltage turn-off simulations with external electrical and thermal circuit elements are presented comparing the isothermal and self-heating cases.
疼死我了
发表于 2025-3-23 05:06:54
On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance,ontroversial issue. In this paper the influence of these flux components on device and circuit performance is evaluated by the example of a state of the art bipolar technology using mixed level 2D-device/circuit simulation.
抛媚眼
发表于 2025-3-23 07:06:31
3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Cihas been used for simulation of the influence of layout parameters on the Safe Operating Area of a BJT and to study the mechanisms that start breakdown processes. For a thermally instable switch-on behaviour of a BJT, a comparison with measurements has been made.