专家
发表于 2025-3-21 17:49:18
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厌食症
发表于 2025-3-21 22:22:09
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GEAR
发表于 2025-3-22 00:53:36
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反馈
发表于 2025-3-22 08:17:42
The SOI MOSFET, Other types of devices (bipolar devices, COMFETs, novel devices) will be reviewed in Chapter 6. SOI MOSFETs exhibit interesting properties which make them particularly attractive for applications such as rad-hard circuits, deep-submicron devices and high-temperature electronics. The properties of t
同步左右
发表于 2025-3-22 10:50:54
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小歌剧
发表于 2025-3-22 16:50:31
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核心
发表于 2025-3-22 20:48:32
SOI Circuits,ssue. High-level radiation hardness is also a prerequisite for circuits used in core instrumentation for nuclear power reactors (a containment accident may lead to more than 100 Mrad(Si) of dose exposure), nuclear well logging, control electronics in spacecraft nuclear reactors, reaction chamber ins
赔偿
发表于 2025-3-23 01:17:17
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grandiose
发表于 2025-3-23 04:00:45
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fiscal
发表于 2025-3-23 09:08:59
0893-3405. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .