狂热文化
发表于 2025-3-26 22:34:48
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贪婪性
发表于 2025-3-27 03:10:07
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利用
发表于 2025-3-27 07:33:19
Book 1994he principles and limitations of transit-time devices with different injection mechanisms are discussed, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter. Two chapters cover the silicon/germanium dev
兽皮
发表于 2025-3-27 10:51:01
Transit-Time Devices,n of oscillations. Later these ideas were implemented in semiconductor devices . This concept is the basis for IMPATT (IMPact Avalanche Transit-Time), BARITT (BARier Injection Transit-Time), TUNNETT (TUNNEl injection Transit-Time) diodes and related versions.
结合
发表于 2025-3-27 17:19:46
Schottky Contacts on Silicon,tal/semiconductor interfaces . The following decades brought out a variety of technical applications, but it took more than sixty years until . and, independently, . gave microscopic concepts to describe these so-called .. Today, in 1994, these interfaces are still not completely understood.
实现
发表于 2025-3-27 18:59:52
Self-Mixing Oscillators,cillation due to the nonlinear behaviour of the active device that generates the RF power. This is, in principle, the same as a self-oscillating mixer besides the fact that the produced local-oscillator power may also be extracted from the self-mixing oscillator, e.g., for transmission in Doppler-radar applications.
讨厌
发表于 2025-3-27 23:42:57
Springer Series in Electronics and Photonicshttp://image.papertrans.cn/s/image/867348.jpg
Decongestant
发表于 2025-3-28 03:23:56
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cortex
发表于 2025-3-28 07:57:56
Silicon Millimeter-Wave Integrated Circuits,The availability of low-cost and reproducible millimeter-wave circuits is of great importance for systems in the future. A promising way to achieve these requirements are integrated circuits based on silicon substrate, the so-called SIMMWICs (Silicon MilliMeter Wave Integrated Circuits).
尽忠
发表于 2025-3-28 11:19:46
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