infelicitous
发表于 2025-3-30 09:11:33
{100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide,ow the same behavior. Furthermore, the surface band structure of both types of semiconductors is semiconducting. On compound semiconductors this is due to the large energy difference between the dangling bonds at surface cations and anions. This causes the dangling bonds to become completely occupie
Dysarthria
发表于 2025-3-30 15:29:51
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Glossy
发表于 2025-3-30 20:02:31
,Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces,, respectively, after annealing treatments at elevated temperatures. The common feature of these large-unit-mesh reconstructions is the reduction of the number of dangling bonds per surface unit area by a factor of 2.6 and 2, respectively. The correlated lowering of the total energy is achieved by a
抛射物
发表于 2025-3-30 21:59:16
Phase Transitions on Silicon and Germanium {111} Surfaces, Ge(111)–c(2 × 8) structures, respectively, at elevated temperatures. At even higher temperatures, a now reversible phase transition to a “1 × 1” structure occurs. For both silicon and germanium {111} surfaces, the “1 × 1” structures consist of a quarter monolayer of disordered adatoms. During conve
含铁
发表于 2025-3-31 03:22:48
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误传
发表于 2025-3-31 08:44:34
Monovalent Adatoms,atom-induced surface dipoles and surface states. The existence of adatom-induced surface dipoles indicates the chemical bonds between adsorbate and substrate atoms to be partly ionic and leads to a variation of the ionization energy of the semiconductor substrate. As a consequence of adatom-induced
有危险
发表于 2025-3-31 12:34:03
Group-III Adatoms on Silicon Surfaces,.. sites. Each of the trivalent adatoms thus saturates the dangling bonds of three silicon surface atoms. Boron, on the other hand, has a much smaller covalent radius than silicon and, therefore, bonds between boron atoms occupying .. sites and nearest-neighbor silicon atoms would be strongly elonga
不成比例
发表于 2025-3-31 14:24:28
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Innovative
发表于 2025-3-31 18:18:08
,Oxidation of Silicon and III–V Compound Semiconductors,high stability, low diffusion coefficients for specific dopants in SiO., a high dielectric strength in the bulk of SiO. films, and a low density of interface states at SiO./Si interfaces are essential in devices such as, for example, metal-oxide-silicon field-effect transistors. Unfortunately, nativ
Feckless
发表于 2025-4-1 00:21:23
Surface Passivation by Adsorbates and Surfactants,ad-sorbates. Hydrogen-coverage, for example, increases the initial sticking coefficient of oxygen, on silicon surfaces by a factor of approximately 10. with respect to what is found on clean silicon surfaces. This behavior is explained by the larger Si-H bond energies in comparison with the Si-Si bo