radionuclides 发表于 2025-3-21 19:46:20
书目名称Semiconductor Physics影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0864877<br><br> <br><br>书目名称Semiconductor Physics读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0864877<br><br> <br><br>GEN 发表于 2025-3-21 22:24:47
http://reply.papertrans.cn/87/8649/864877/864877_2.png灰心丧气 发表于 2025-3-22 01:07:53
Photoconductivity,In Sects. 5.8, 5.9 we considered diffusion of carriers which are generated by the absorption of light. In this chapter we will discuss photoconductivity in greater detail with emphasis on trapping processes.巨大没有 发表于 2025-3-22 06:46:01
http://reply.papertrans.cn/87/8649/864877/864877_4.pngLATE 发表于 2025-3-22 09:08:50
http://reply.papertrans.cn/87/8649/864877/864877_5.pngtransient-pain 发表于 2025-3-22 13:48:27
http://reply.papertrans.cn/87/8649/864877/864877_6.pngDedication 发表于 2025-3-22 18:51:31
https://doi.org/10.1007/978-3-662-05025-5Quantum Hall Effect; Scattering processes; Semiconductors; Standard; algebra; electronics; laser; mathematiClimate 发表于 2025-3-22 22:02:35
Carrier Diffusion Processes,urrent j = −...∇.., where .. is proportional to the electron mobility due to the Einstein relation (4.10.12). In this chapter we will investigate the diffusion of . carriers in local variations in the type of doping, which is typical for p-n junctions and bipolar transistors.责问 发表于 2025-3-23 02:40:49
http://reply.papertrans.cn/87/8649/864877/864877_9.pngGNAW 发表于 2025-3-23 06:20:23
Carrier Transport in the Warped-Sphere Model,his case are warped spheres which have already been discussed in Sect. 2.4 (Figs. 2.28a–2.28c). In the zincblende lattice typical for III–V compounds, there is no center of inversion, in contrast to the diamond lattice.