东西
发表于 2025-3-25 03:44:33
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bonnet
发表于 2025-3-25 09:21:46
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harangue
发表于 2025-3-25 14:24:57
0930-8989 r a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a coll
山顶可休息
发表于 2025-3-25 18:35:52
Field Emission Microscopy for Analysis of Semiconductor Surfaceslectrons as they extend into vacuum, these studies can be completed with interest in a following step by Fowler-Nordheim I-V characteristics analysis. Much more informations can be obtained if an energy distribution device is coupled, allowing for example the determination of the surface density of states of semiconductors.
转向
发表于 2025-3-25 23:04:28
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FLEET
发表于 2025-3-26 03:50:28
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总
发表于 2025-3-26 05:47:16
SEXAFS for Semiconductor Interface Studieses. We propose some comments on the applicability of SEXAFS to the interface formation problem, a brief review of the merits of the technique, an overview of selected studies from the recent literature, and a status report of the SEXAFS interface studies underway.
mettlesome
发表于 2025-3-26 10:49:17
An Introduction to the Formation and Properties of Semiconductor Interfacesgle crystal, and the outside world. This outside world can be as friendly as the same crystal, differing only through its doping, in the case of a homojunction. It can be as hostile and unpredictable as the deleterious atmosphere of a big city. Besides giving a finite size to a device, interfaces ac
conservative
发表于 2025-3-26 13:02:44
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打折
发表于 2025-3-26 20:12:21
Atomic Structure of Semiconductor Surfaces of silicon, of germanium and of a large variety of III-V covalent semiconductors. Even the most elusive reconstruction of silicon: Si (111) 7x7 seems now to be solved, thereby bringing a journey of a quarter century close to its end.