Pierce
发表于 2025-3-21 17:52:15
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惊奇
发表于 2025-3-21 23:05:18
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范例
发表于 2025-3-22 03:50:19
Avalanche-Diode Microwave Oscillators, Amplifiers, and Gunn Devices,d, 2.60–3.95 GHz; . band, 4.90–7.05 GHz; . band, 8.20–12.40 GHz; . band, 15.3–18.0 GHz, and . band, 18.0–26.50 GHz. At . band the wavelength is about 3 cm and above 30 GHz the wavelengths enter the millimeter range.
口音在加重
发表于 2025-3-22 08:01:32
Light-Emitting Diodes and Injection Lasers,n the infrared region and not visible to the human eye. The bandgap of GaAs.P., however, is about 1.9 eV which corresponds to emission at 650 nm in the red region of the spectrum. Hence GaAsP is a widely used material for light-emitting diodes.
aneurysm
发表于 2025-3-22 08:57:51
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蛙鸣声
发表于 2025-3-22 15:39:52
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ARBOR
发表于 2025-3-22 18:13:46
Integrated Circuit Fundamentals,Integrated circuit technology has made possible instruments and applications that were inconceivable on the grounds of cost, size and reliability a decade ago.
ethnology
发表于 2025-3-22 22:43:05
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我不明白
发表于 2025-3-23 04:10:58
Semiconductor Junctions and Diodes,he stage but there is no space to consider in detail elementary concepts of semiconductors or circuits. Some familiarity is therefore assumed with analog and digital circuits, amplifiers, oscillators, modulators and gates; and with semiconductor concepts of bandgaps, mobilities, density of states, F
收到
发表于 2025-3-23 07:29:21
Metal-Semiconductor Schottky-Barrier Diodes,g. 2.1 (a), determines the barrier height (φ. − χ.) for the simple model shown on Fig. 2.1(b). This barrier forms by equalization of the Fermi levels across the junction due to the movement of electrons from the semiconductor to the metal interface. The barrier in the semiconductor itself is .. = φ.