叛乱分子
发表于 2025-3-21 17:22:49
书目名称Self-Organizing Systems影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0864525<br><br> <br><br>书目名称Self-Organizing Systems读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0864525<br><br> <br><br>
可忽略
发表于 2025-3-21 20:16:09
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nepotism
发表于 2025-3-22 03:26:50
978-3-540-92156-1Springer-Verlag Berlin Heidelberg 2008
Peristalsis
发表于 2025-3-22 07:51:07
Self-Organizing Systems978-3-540-92157-8Series ISSN 0302-9743 Series E-ISSN 1611-3349
Concrete
发表于 2025-3-22 09:03:15
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LEER
发表于 2025-3-22 16:40:25
Peter Merz,Steffen Wolf,Dennis Schwerdel,Matthias Priebeor in the basal. plane and poor electrical conductivity along the c-axis . In contrast, diamond is an isotropic cubic wide gap semiconductor . In terms of mechanical properties, graphite is the stiffest material in nature (has the highest in-plane elastic modulus), while diamond is the har
否决
发表于 2025-3-22 20:16:58
Nouha Oualha,Yves Roudierence on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I w978-1-4684-2153-8978-1-4684-2151-4
可以任性
发表于 2025-3-22 21:34:10
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engrossed
发表于 2025-3-23 04:38:53
Tallat M. Shafaat,Ali Ghodsi,Seif Haridience on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I w978-1-4684-2153-8978-1-4684-2151-4
现代
发表于 2025-3-23 08:48:37
Simon Oechsner,Sergios Soursos,Ioanna Papafili,Tobias Hossfeld,George D. Stamoulis,Burkhard Stiller,eater for lighter ions. The stimulation of lattice disorder annealing (typically ≈ 10%) by ion beams was observed between 87 and 360°K. The results of disorder production and lattice reordering are interpreted in terms of the energy deposited into atomic and electronic processes, and previously obse