bradycardia
发表于 2025-3-21 17:14:18
书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0828484<br><br> <br><br>书目名称Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0828484<br><br> <br><br>
Gyrate
发表于 2025-3-21 22:17:42
Preface,dered by the technological roadmap (ITRS) as a promising concept for the next-generation nonvolatile memory storage and as an important key toward computation with neuromorphic algorithms. ReRAMs are regarded as conceptually new building units in modern nanoelectronics, finding application not only
acrophobia
发表于 2025-3-22 01:29:56
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ARM
发表于 2025-3-22 07:38:22
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Infusion
发表于 2025-3-22 10:45:12
Review of Mechanisms Proposed for Redox Based Resistive Switching Structures,ator is an oxide. The oxide conducts oxygen via oxygen vacancies. MOM devices in which the insulator conducts intercalated cations are analogous to the ones with mobile oxygen vacancies. Switching, memory and short term hysteresis are three independent phenomena governed by different mechanisms. A n
把手
发表于 2025-3-22 14:53:05
Probing Electrochemistry at the Nanoscale: In Situ TEM and STM Characterizations of Conducting Filas in confined spaces down to nanometer or even atomic scales. Understanding such localized and inhomogeneous electrochemical processes is a challenging but crucial task for continued applications of memristors in nonvolatile memory, reconfigurable logic, and brain inspired computing. Here we give a
DOSE
发表于 2025-3-22 20:06:20
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GENRE
发表于 2025-3-22 23:32:11
SiO2-Based Conductive-Bridging Random Access Memory,omising type of resistive nonvolatile memory which relies on metal ion transport and redox reactions to form a persistent conducting filament in a high-resistance film. This effect may be reversed to return the device to a high-resistance state. Such control over resistance can be used to represent
DAMP
发表于 2025-3-23 01:21:38
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假装是我
发表于 2025-3-23 09:04:27
,Effect of O2− Migration in Pt/HfO2/Ti/Pt Structure,rnal influence. We identify that the resistance ratio decreases by 100× in a month time period due to the natural oxidation of the Ti layer in contact of the HfO. layer. We then propose two paths to control both the final properties of the device and the aging process. The first approach consists in