CYT
发表于 2025-3-25 06:39:48
Techniques and Devices, of the studied (Si)Ge devices is described, highlighting the impact of the main process parameters on the device electrical characteristics. Finally, the used on-wafer structures are described, with particular focus on a dedicated Poly-Si heater structure, developed for accelerated reliability tests.
Embolic-Stroke
发表于 2025-3-25 08:27:00
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defenses
发表于 2025-3-25 14:30:16
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边缘
发表于 2025-3-25 17:08:11
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Chandelier
发表于 2025-3-25 22:18:30
Negative Bias Temperature Instability in (Si)Ge pMOSFETs,eters on the device reliability is discussed. The experimental learning is then combined to propose a reliability-oriented gate stack optimization, which is shown to enable ultrathin EOT devices with sufficient reliability, i.e., 10 years of continuous operation at nominal . .. The demonstrated resu
Default
发表于 2025-3-26 03:17:21
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CHIDE
发表于 2025-3-26 04:25:40
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Judicious
发表于 2025-3-26 12:04:21
1437-0387 ts.Complete reliability study of the novel (Si)Ge channel qu.Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively
四目在模仿
发表于 2025-3-26 15:48:45
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赌博
发表于 2025-3-26 17:59:06
Jacopo Franco,Ben Kaczer,Guido Groesenekene die Befragten verfolgen, wurden zunächst 16 Aussagen zu verschiedenen Kommunikationsabsichten in einer vierstufigen Skala abgefragt. Auf diese Weise konnten die Teilnehmer differenziert abwägen, ob die verschiedenen Berufsziele ihrer Meinung nach „überhaupt nicht“ bis „voll und ganz“ zutreffen. Di