BRIEF 发表于 2025-4-1 05:34:32
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Strain-Relief at Internal Dielectric Interfaces in High-, Gate Stacks with Transition Metal and Rarare earth atom elemental and complex oxides, as well as transition metal silicate alloys. The focus is on the strain-induced defects, and the reduction of defect densities through strain-driven self-organizations that take place during high-temperature post-deposition annealing.synovial-joint 发表于 2025-4-1 10:46:18
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