Insul岛
发表于 2025-3-23 10:07:18
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喊叫
发表于 2025-3-23 14:55:18
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adj忧郁的
发表于 2025-3-23 19:56:11
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expound
发表于 2025-3-23 23:51:42
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Fortify
发表于 2025-3-24 05:36:30
Recrystallization of Implanted Layers and Impurity Behavior in Silicon Crystals,studies using RTP have operated in the thermal flux or heat balance regimes (as defined in Section 1.1). Moreover, the heat balance regime is often preferred with incoherent light and for short heating times (seconds). Solid-state processes initiated in semiconductors by RTP are mainly of thermal or
choleretic
发表于 2025-3-24 07:32:12
Crystallization, Impurity Diffusion, and Segregation in Polycrystalline Silicon,s, and interconnections where low sheet resistivity is important . Heavily doped layers are also attractive as diffusion sources for doping the underlying substrate . Finally, polysilicon has been recrystallized successfully into device-quality material for three-dimensional integrated circu
产生
发表于 2025-3-24 12:24:00
,Component Evaporation, Defect Annealing, and Impurity Diffusion in the III–V Semiconductors,tegrated circuits . They have unique and promising optical and electrophysical properties compared to silicon and germanium. However, their utilization is limited by the dramatic influence that thermal processes employed during device fabrication have on these properties based on primarily the
伪造
发表于 2025-3-24 17:23:30
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SSRIS
发表于 2025-3-24 21:01:13
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STEER
发表于 2025-3-25 03:08:25
Rapid Thermal Chemical Vapor Deposition,f materials, the potential for further development is great. The earliest work was on single-crystal epitaxial silicon by Gibbons and colleagues who referred to the process as limited reaction processing (LRP). One of the principal advantages of RTCVD is that sharp transitions are obtained betwe