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发表于 2025-3-21 18:55:39
书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors影响因子(影响力)<br> http://impactfactor.cn/if/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors影响因子(影响力)学科排名<br> http://impactfactor.cn/ifr/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors网络公开度<br> http://impactfactor.cn/at/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors网络公开度学科排名<br> http://impactfactor.cn/atr/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors被引频次<br> http://impactfactor.cn/tc/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors被引频次学科排名<br> http://impactfactor.cn/tcr/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors年度引用<br> http://impactfactor.cn/ii/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors年度引用学科排名<br> http://impactfactor.cn/iir/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors读者反馈<br> http://impactfactor.cn/5y/?ISSN=BK0820109<br><br> <br><br>书目名称RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors读者反馈学科排名<br> http://impactfactor.cn/5yr/?ISSN=BK0820109<br><br> <br><br>
ABOUT
发表于 2025-3-21 22:13:47
https://doi.org/10.1007/978-3-030-77775-3Characterization of novel transistors; electrical performance of novel devices; Frequency characteriza
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发表于 2025-3-22 01:56:54
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不如乐死去
发表于 2025-3-22 05:41:14
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阐释
发表于 2025-3-22 11:12:12
RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors
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发表于 2025-3-22 15:38:26
RF and Time-domain Techniques for Evaluating Novel Semiconductor Transistors978-3-030-77775-3
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发表于 2025-3-22 17:29:29
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山间窄路
发表于 2025-3-22 22:03:02
Measurement of the Frequency Response of Transistors,apacitance which is small compared to the parasitic probe input capacitance, which occurs for back-gated transistors. The frequency response of very low current transistors can be evaluated with direct measurements of power gain as a function of frequency, but input-to-output crosstalk limits the fr
Confidential
发表于 2025-3-23 02:22:52
Measurement of the Large-Signal Propagation Delay of Single Transistors, to evaluate conventional microelectronics, modification of the structures and measurement techniques can also be used to go beyond performance measurement to assess aging, drift, and time-dependence, which might occur in novel transistors.
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发表于 2025-3-23 07:07:41
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