OPINE
发表于 2025-3-23 11:35:01
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远地点
发表于 2025-3-23 17:10:37
Summary and Future Work,served is the stability of PL peak of multilayer structure even after high temperature annealing. Then we have moved from materials to devices. We have used both InAs/GaAs and In(Ga)As/GaAs QD in the active layer of the multilayer heterostuctures. Improvement in device characteristics was also observed for the samples with ex-situ annealing.
Jingoism
发表于 2025-3-23 19:00:11
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外表读作
发表于 2025-3-23 23:10:35
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debacle
发表于 2025-3-24 02:29:19
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符合你规定
发表于 2025-3-24 08:12:14
https://doi.org/10.1007/978-981-10-5290-3Photodetector; Quaternary capped; Detectivity in quantum dots; Annealing in quantum dots; Epitaxy in qua
透明
发表于 2025-3-24 13:45:01
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MOCK
发表于 2025-3-24 15:45:54
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撕裂皮肉
发表于 2025-3-24 19:31:21
Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared PhotodetectorsFrom Materials to De
自传
发表于 2025-3-25 01:21:33
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