恐怖
发表于 2025-3-21 20:01:07
书目名称Oxide and Nitride Semiconductors影响因子(影响力)<br> http://figure.impactfactor.cn/if/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors影响因子(影响力)学科排名<br> http://figure.impactfactor.cn/ifr/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors网络公开度<br> http://figure.impactfactor.cn/at/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors网络公开度学科排名<br> http://figure.impactfactor.cn/atr/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors被引频次<br> http://figure.impactfactor.cn/tc/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors被引频次学科排名<br> http://figure.impactfactor.cn/tcr/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors年度引用<br> http://figure.impactfactor.cn/ii/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors年度引用学科排名<br> http://figure.impactfactor.cn/iir/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors读者反馈<br> http://figure.impactfactor.cn/5y/?ISSN=BK0705335<br><br> <br><br>书目名称Oxide and Nitride Semiconductors读者反馈学科排名<br> http://figure.impactfactor.cn/5yr/?ISSN=BK0705335<br><br> <br><br>
懒惰民族
发表于 2025-3-21 22:04:27
Growth of Nonpolar GaN and ZnO Films,sis is on the typical features of growth, structural properties, and procedures to grow nonpolar films with improved crystal quality. The results of lateral epitaxial overgrowth of nonpolar GaN films are also discussed.
主动
发表于 2025-3-22 00:32:05
ZnO and GaN Nanostructures and their Applications,thods or by processing. ZnO- and GaN-based nanostructures can successfully be used for fabrications of various sensors, transistors as well as for photonic device applications including light emitting diodes.
intrude
发表于 2025-3-22 05:38:26
Book 2009tures and the applications, and light emitters based on GaN and ZnO are treated succinctly. The unique format of touching both materials in each chapter enables this book to be very fresh, essential, and easy-to-access for readers who have interests in, and need getting more involved with, the most exciting compound semiconductors, ZnO and GaN.
Ligament
发表于 2025-3-22 11:54:08
Structural Defects in GaN and ZnO,ensity have been reported. Detailed techniques including epitaxial lateral over growth and employment of buffers that lead to the growth of high quality films with a low dislocation density are discussed.
antenna
发表于 2025-3-22 15:25:08
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后退
发表于 2025-3-22 20:44:16
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mosque
发表于 2025-3-23 01:14:30
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forestry
发表于 2025-3-23 03:04:44
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香料
发表于 2025-3-23 09:01:05
Optical Properties of GaN and ZnO,res, the polarization selection rules can be obtained in simpler forms. Some recent reports will also be introduced stating that the anisotropic strain in nonpolar films plays an important role in deciding the polarization selectivity. The results of Raman spectroscopy are summarized in the end, wit